Abstract:
We synthesized vapor-growth diamonds by two kinds of Chemical Vapor Deposition (CVD) using microwave (MWCVD) and hot filament (HFCVD) ionization of gases, and examined elemental abundances and isotopic compositions of the noble gases trapped in the diamonds. It is remarkable that strong differences existed in the noble gas concentrations in the two kinds of CVD diamonds: large amounts of noble gases were trapped in the MWCVD diamonds, but not in the HFCVD diamonds. The heavy noble gases (Ar to Xe) in the MWCVD diamonds were highly fractionated compared with those in the ambient atmosphere, and are in good agreement with the calculated fractionation patterns for plasma at an electron temperature of 7000–9000 K. These results strongly suggest that the trapping mechanism of noble gases in CVD diamonds is ion implantation during diamond growth. The degrees of fractionation of heavy noble gases were also in good agreement with those in ureilites. The vapor-growth hypothesis is discussed in comparison with the impact-shock hypothesis as a better model for the origin of diamonds in ureilites. The diamond (and graphite, amorphous carbon, too) may have been deposited on early condensates such as Re, Ir, W, etc. This model explains the chemical features of vein material in ureilites; the refractory siderophile elements are enriched in carbon and noble gases and low in normal siderophiles. The vapor-growth model is also compatible with the oxygen isotopic data of ureilites which suggests that nebular processes are primarily responsible for the composition of ureilites.