ETCHING OF DIAMOND CRYSTALS IN THE SYSTEM SILICATE MELT-C-O-H-S FLUID UNDER A HIGH PRESSURE

dc.contributor.author	Sonin V.M.
dc.contributor.author	Afanas'ev V.P.
dc.contributor.author	Tomilenko A.A.
dc.contributor.author	Zhimulev E.I.
dc.contributor.author	Chepurov A.I.
dc.date.accessioned	2022-01-15T07:43:07Z
dc.date.available	2022-01-15T07:43:07Z
dc.date.issued	2003
dc.identifier	https://www.elibrary.ru/item.asp?id=13440878
dc.identifier.citation	Geochemistry International, 2003, 41, 7, 688-693
dc.identifier.issn	0016-7029
dc.identifier.uri	https://repository.geologyscience.ru/handle/123456789/34332
dc.description.abstract	This paper presents experimental data on etching plane-faced octahedral diamond crystals in the system silicate melt-C-O-H-S fluid at 3 GPa and 1300°C. It was established that the curved-surface crystals of octahedroid type with micromorphological features characteristic of natural diamonds are formed from plane-faced individuals during etching. The introduction of sulfur into the system does not change the morphology of etched diamond in comparison with the etching results in the system silicate melt-C-O-H fluid. The contact of sulfide melt droplets with diamond crystal surface gives rise to the formation of faced cavities owing to the higher carbon solubility in sulfide melt compared to that in the silicate liquid.
dc.title	ETCHING OF DIAMOND CRYSTALS IN THE SYSTEM SILICATE MELT-C-O-H-S FLUID UNDER A HIGH PRESSURE
dc.type	Статья

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