EFFECT OF OXYGEN FUGACITY ON THE ETCHING RATE OF DIAMOND CRYSTALS IN SILICATE MELT

dc.contributor.author	Sonin V.M.
dc.contributor.author	Zhimulev E.I.
dc.contributor.author	Fedorov I.I.
dc.contributor.author	Chepurov A.I.
dc.date.accessioned	2024-12-15T02:15:17Z
dc.date.available	2024-12-15T02:15:17Z
dc.date.issued	2006
dc.identifier	https://www.elibrary.ru/item.asp?id=13507446
dc.identifier.citation	Geology of Ore Deposits, 2006, 48, 6, 499-501
dc.identifier.issn	1075-7015
dc.identifier.uri	https://repository.geologyscience.ru/handle/123456789/46990
dc.description.abstract	Experimental data on the etching of diamond crystals in basaltic melt at 1130°C with variable oxygen fugacity in the environment are considered. The oxygen fugacity was set with the HM and NNO buffers. The study was carried out on a 0.6 - 0.8 mm fraction (powder) of natural diamond crystals. It has been established that, at the same temperature, the rate of diamond etching (oxidation) in silicate melt depends on the oxygen fugacity in the environment. The etching rate decreases with decline in the oxygen fugacity from the case where the melt comes into contact with atmospheric air to the conditions controlled by the HM and NNO buffers. Under the conditions of the HM and NNO buffers, oxidation was accompanied by surface graphitization of diamond crystals. © Pleiades Publishing, Inc. 2006.
dc.title	EFFECT OF OXYGEN FUGACITY ON THE ETCHING RATE OF DIAMOND CRYSTALS IN SILICATE MELT
dc.type	Статья
dc.identifier.doi	10.1134/S1075701506060055

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